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| MDS35 / 50 / 80 Series DIODE / SCR MODULE MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 50-70-85 800 and 1200 50 and 100 Unit A V mA DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power applications, using phase controlled bridges, such as soft-start circuits, welding equipment, motor speed controller. The compactness of the ISOTOP package allows high power density and optimized power bus connections. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (File ref: E81734). PIN CONNECTIONS ISOTOP(R) ABSOLUTE RATINGS (limiting values) Value Symbol IT(RMS) IT(AV) ITSM IFSM It dI/dt IGM PG(AV) Tstg Tj VRGM RMS on-state current Average on-state current (Single phase-circuit, 180 conduction angle per device) tp = 8.3 ms Non repetitive surge peak on-state current (Tj initial = 25C) tp = 10 ms It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse SCR gate voltage tp = 10 ms F = 60 Hz tp = 20 s Tc = 85C Tj = 25C Tj = 25C Tj = 125C Tj = 125C Tj = 125C Parameter 35 50 25 420 400 50 70 35 630 600 80 85 55 730 700 A2S A/s A W C V 1/7 A A A Unit 800 1800 2450 50 4 1 - 40 to + 150 - 40 to + 125 5 ISOTOP is a registred trademark of STMicroelectronics December 2000 - Ed: 4 MDS35 / 50 / 80 Series ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) SCR MDS Symbol I GT VD = 12 V VGT VGD IH IL dV/dt VD = VDRM IT = 500 mA IG = 1.2 I GT VD = 67% VDRM ITM = 80 A VTM ITM = 110 A ITM = 170 A Vt0 Rd IDRM IRRM Gate open Tj = 125C RL = 3.3 k Gate open Tj = 125C RL = 30 Test Conditions 35 MIN. MAX. MAX. MIN. MAX. MAX. MIN. 1.7 Tj = 25C MAX. Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. 11 5 50 1.3 0.2 80 120 1000 1.75 0.85 7.0 20 10 5.5 1.75 V m A mA V 50 80 10 100 V V mA mA V/s mA Unit tp = 380 s tp = 380 s tp = 380 s Threshold voltage Dynamic resistance VDRM / V RRM RATED DIODE MDS Symbol VF IF = 80 A IF = 110 A IF = 170 A Vt0 Rd IR Threshold voltage Dynamic resistance VR = VRRM Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. 11 Tj = 25C MAX. Test Conditions 35 1.7 50 1.7 0.85 7.0 20 10 5.5 80 1.7 V m A mA V Unit 2/7 MDS35 / 50 / 80 Series THERMAL RESISTANCES Symbol Rth(j-c) Junction to case (DC) Parameter MDS35 MDS50 MDS80 Value 1.00 0.75 0.45 Unit C/W PRODUCT SELECTOR Voltage (xxx) Part Number 800 V MDS35-xxx MDS50-xxx MDS80-xxx X X X 1200 V X X X 50 mA 50 mA 150 mA ISOTOPTM Sensitivity Package ORDERING INFORMATION SCR MODULE SERIES CURRENT: 35: 50A 50: 70A 80: 85A VOLTAGE: 800: 800V 1200: 1200V OTHER INFORMATION Part Number MDS35-xxx MSDS50-xxx MDS80-xxx Note: xxx = voltage Marking MDS35-xxx MDS50-xxx MDS80-xxx Weight 27.0 g 27.0 g 27.0 g Base Quantity 10 10 10 Packing mode Tube Tube Tube 3/7 MDS35 / 50 / 80 Series Fig. 1-1: Maximum average power dissipation versus average on-state current (thyristor or diode, sinusoidal waveform). Fig. 1-2: Maximum average power dissipation versus average on-state current (thyristor or diode, rectangular waveform). Fig. 1-3: Maximum total power dissipation versus output current on resistive or inductive load (Single phase bridge rectifier, two packages). Fig. 1-4: Maximum total power dissipation versus output current (Three phase bridge rectifier, three packages). Fig. 2-1: Average on-state current versus case temperature (thyristor or diode, sinusoidal waveform). Fig. 2-2: Average on-state current versus case temperature (thyristor or diode, rectangular waveform). 4/7 MDS35 / 50 / 80 Series Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5-1: Surge peak on-state current versus number of cycles (MDS35 and MDS50). Fig. 5-2: Surge peak on-state current versus number of cycles (MDS80). Fig. 6-1: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of It (MDS35 and MDS50). Fig. 6-2: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of It (MDS80). 5/7 MDS35 / 50 / 80 Series Fig. 7-1: On-state characteristics (thyristor or diode, maximum values) (MDS35). Fig. 7-2: On-state characteristics (thyristor or diode, maximum values) (MDS50). Fig. 7-3: On-state characteristics (thyristor or diode, maximum values) (MDS80). 6/7 MDS35 / 50 / 80 Series PACKAGE MECHANICAL DATA ISOTOPTM DIMENSIONS REF. Millimeters Min. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Max. Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.976 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 typ. 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 s s Recommended torque value: 1.3 Nm (max. 1.5 Nm) for the 6 x M4 screws (2 x M4 screws recommended for mounting the package on the heatsink and the 4 provided screws. The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min. and 2.2 mm max. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com 7/7 |
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